IBS Institute for Basic Science
Search
Home Print Page

RIE(Reactive Ion Etching) System

equipment explanation
Model AFS-4RT
Operating time SUN(00:00~24:00)
MON(00:00~24:00)
TUE(00:00~24:00)
WED(00:00~24:00)
THU(00:00~24:00)
FRI(00:00~24:00)
SAT(00:00~24:00)
Location 86698
inquiry Wei Xu
010-8289-8566
Reservation

Notice

 

Available Time // Always possible.

 

Notice // If you want to have training for using this equipment, please contact Super-user.

 

Current Status // Now on operation.

Reactive Ion Etching (RIE) is a simple operation, and an economical solution for general plasma etching.
Plasma is produced in the system by applying a strong RF (radio frequency) electromagnetic field to the electrode

 

 

Dimensions : 1100W*800D*``50Hmm /200kg
Bottom plasma source : CCP (capacitively coupled plasma) source type
Bottom RF generator : 13.56 MHz, 300W (Water cooling system)

 

Chamber : top plate open type
substrate :  Max.4" wafer applicable

 

Vacuum module : oil rotary vacuum pump
Gas supply module : 4CH MFC 50 sccm (O2, Ar, SF6, selection)/ purge 1ch. N2
Control module : 7" LCD panel/ interlock function (CDA, coolant)

LIST