Center for Relativistic Laser Science

1. Equipment name : Low temperature PECVD (저온플라즈마 화학기상증착장비)

2. Manufacture and Model

- Samco Inc. 2018

- model PD-100ST

3. Purpose : This equipment is used to measurement for low temperature detectors. It utilize a liquid TEOS source o deposit SiO2 films at hogh speed using a low temperature process. Furthermore, the proprietary self-bias deposition of thin and thick films with low internal stress.

4. Specification and performance

- Main Chamber

    : STS304

    : cylindrical Φ = 260.6 mm

    : Maximum 4 inch wafer

    : view port for visual confirmation of plasma

    : chamber lid opens and closes manually

- Electrodes

    : parallel plate (capacitive coupling)

    : fixed gap between electrodes: 29 mm

- Resistive heater : Max. 300 ℃

- PID controlled resistive heater : Max. 350 ℃

- PID controlled RF Generator

    : 13.56 MHz

    : Max. 300 W

    : crystal oscillation

    : all solid state

- Matching Unit

    : automatic matching

- Liquid Source Line

    : the flow rate of the vaporized liquid source is directly controlled

    : source tank

    : source tank heating (75-85 ℃)

    : gas flow control

    : gas inlet valve :: bellows seal valve (air operated)

    : protection to over heat problems

- Process Gas Lines

- Vacuum Gauge

- Process Vacuum Line

    : Dry pump (2000 liter/min at 50/60 Hz)

- Pressure Control

    : automatic pressure control (variable evacuation conductance)

- System Control

    : automatic operation via programmable logic controller

5. Location and Picture :

- IBS head quarter, C169 clean room 1000 (deposition room)